PROFET® BTS409L1 Smart High-Side Power Switch Product Summary Overvoltage protection V 43 V bb(AZ) Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance RON 200 m Features  Overload protection Load current (ISO) IL(ISO) 2.3 A  Current limitation Current limitation IL(SCr) 4 A  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump) PG-TO263-5-2  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in ON-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (ESD) protection  Green Product (RoHS compliant)  AEC Qualified Application  C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  All types of resistive, inductive and capacitve loads  Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + V bb 3 Voltage Overvoltage Current Gate source protection limit protection V Logic Voltage Charge Limit for OUT unclampe 5 sensor puLmevpe l idn d. loads Temperature shifter sensor 2 IN Rectifier Open load Short to Vbb Load ESD Logic detection 4 ST R O  GND PROFET GND 1 Signal GND Load GND 1) With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST GND connection, reverse load current limited by connected load. Data Sheet 1 2013-10-10

BTS409L1 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT O Output to the load (Load, L) Data Sheet 2 2013-10-10

BTS409L1 Maximum Ratings at T = 25 °C unless otherwise specified j Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 4) V 43 V bb Supply voltage for short circuit protection V 34 V bb T =-40 ...+150°C j Start Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) I self-limited A L Operating temperature range T -40 ...+150 °C j Storage temperature range T -55 ...+150 stg Power dissipation (DC), T  25 °C P 18 W C tot Inductive load switch-off energy dissipation, single pulse V =12V, T =150°C, T =150°C const. bb j,start C IL = 2.3 A, ZL = 98 mH, 0 : EAS 335 mJ Electrostatic discharge capability (ESD) IN: V 1.0 kV ESD (Human Body Model) all other pins: 2.0 acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) V -10 ... +16 V IN Current through input pin (DC) I 2.0 mA IN Current through status pin (DC) I 5.0 ST see internal circuit diagrams page 7 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: R -- -- 7 K/W thJC junction - ambient (free air): RthJA -- -- 75 SMD version, device on PCB5): 39 2) Supply voltages higher than V require an external current limit for the GND and status pins, e.g. with a bb(AZ) 150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) R = internal resistance of the load dump test pulse generator I 4) V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Load dump 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 2013-10-10

BTS409L1 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C: RON -- 160 200 m Tj=150 °C: 320 400 Nominal load current, ISO Norm (pin 3 to 5) 1.8 2.3 V = 0.5 V, T = 85 °C I -- A ON C L(ISO) Output current (pin 5) while GND disconnected or I -- -- 10 mA L(GNDhigh) GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% V : t 80 200 400 s OUT on Turn-off time IN to 10% V : t 80 200 400 OUT off RL = 12 , Tj =-40...+150°C Slew rate on dV /dt 0.1 -- 1 V/s on 10 to 30% VOUT, RL = 12 , Tj =-40...+150°C Slew rate off -dV/dt 0.1 -- 1 V/s off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C Operating Parameters Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V Undervoltage restart Tj =-40...+25°C: Vbb(u rst) -- -- 5.0 V Tj =+150°C: 7.0 Undervoltage restart of charge pump V -- 5.6 7.0 V bb(ucp) see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis V -- 0.2 -- V bb(under) V = V - V bb(under) bb(u rst) bb(under) Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C: Vbb(over) -- 0.5 -- V Overvoltage protection7) Tj =-40...+150°C: Vbb(AZ) 42 47 -- V I =40 mA bb Standby current (pin 3) VIN=0 Tj=-40...+25°C: Ibb(off) -- 10 23 A T= 150°C: -- 12 28 j 6) At supply voltage increase up to V = 5.6 V typ without charge pump, V V - 2 V bb OUT bb 7) See also VON(CL) in table of protection functions and circuit diagram page 8. Data Sheet 4 2013-10-10

BTS409L1 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Leakage output current (included in Ibb(off)) IL(off) -- -- 12 A VIN=0 Operating current (Pin 1)8), V =5 V, I -- 1.8 3.5 mA IN GND Tj =-40...+150°C Protection Functions9) Initial peak short circuit current limit (pin 3 to 5) I L(SCp) Tj =-40°C: 5.5 9.5 13 A T =25°C: 4.5 7.5 11 j T =+150°C: 3 5 7 j Repetitive short circuit shutdown current limit I L(SCr) T = T (see timing diagrams, page 10) -- 4 -- A j jt Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 41 47 53 V Thermal overload trip temperature T 150 -- -- °C jt Thermal hysteresis T -- 10 -- K jt Reverse battery (pin 3 to 1) 10) -V -- -- 32 V bb Diagnostic Characteristics Open load detection current Tj=-40 °C: IL (OL) 10 -- 200 mA (on-condition) Tj=25 ..150°C: 10 -- 150 Open load detection voltage11) (off-condition) V 2 3 4 V OUT(OL) T=-40..150°C: j Internal output pull down (pin 5 to 1), V =5 V, T=-40..150°C R 4 10 30 k OUT j O 8) Add I , if I > 0, add I , if V >5.5 V ST ST IN IN 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 11) External pull up resistor required for open load detection in off state. Data Sheet 5 2013-10-10

BTS409L1 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Input and Status Feedback12) Input resistance R 2.5 3.5 6 k I see circuit page 7 Input turn-on threshold voltage T =-40..+150°C: V 1.7 -- 3.5 V j IN(T+) Input turn-off threshold voltage T =-40..+150°C: V 1.5 -- -- V j IN(T-) Input threshold hysteresis  V -- 0.5 -- V IN(T) Off state input current (pin 2), V = 0.4 V, I 1 -- 50 A IN IN(off) T =-40..+150°C j On state input current (pin 2), V = 3.5 V, I 20 50 90 A IN IN(on) T =-40..+150°C j Delay time for status with open load after switch t 100 400 800 s d(ST OL4) off (see timing diagrams, page 11), Tj =-40..+150°C Status invalid after positive input slope t -- 250 600 s d(ST) (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) -- -- 0.4 Tj = +150°C, IST = +1.6 mA: -- -- 0.6 12) If a ground resistor R is used, add the voltage drop across this resistor. GND Data Sheet 6 2013-10-10

BTS409L1 Truth Table Input- Output Status level level Normal L L H operation H H H Open load L 13) H (L14)) H H L Short circuit L H L15) to Vbb H H H (L16)) Overtem- L L H perature H L L Under- L L H voltage H L H Overvoltage L L H H L H L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12) Terms Status output +5V Ibb 3 I IN IN Vbb RST(ON) ST 2 IL VON PROFET OUT IST 5 ESD- ST ZD 4 GND VIN VST GND Vbb 1 IGND VOUT ESD-Zener diode: 6.1 V typ., max 5 mA; RGND RST(ON) < 380  at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) Inductive and overvoltage output clamp R IN I + Vbb V Z ESD-ZD I I I V ON GND OUT ESD zener diodes are not to be used as voltage clamp PROFET GND at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VON clamped to 47 V typ. 13) Power Transistor off, high impedance 14) with external resistor between pin 3 and pin 5 15) An external short of output to V , in the off state, causes an internal current from output to ground. If R bb GND is used, an offset voltage at the GND and ST pins will occur and the V signal may be errorious. ST low 16) Low resistance to V may be detected in ON-state by the no-load-detection bb Data Sheet 7 2013-10-10

BTS409L1 GND disconnect Overvolt. and reverse batt. protection + Vbb 3 V bb IN V R R Z2 2 IN I IN PROFET OUT 5 Logic ST RST ST 4 GND VZ1 PROFET Vbb VIN VST 1 VGND GND R GND Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) . Signal GND Due to VGND >0, no VST = low signal available. VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ. GND disconnect with GND pull up Open-load detection 3 ON-state diagnostic condition: V < R * I ; IN ON ON L(OL) V high IN bb 2 PROFET OUT + Vbb 5 ST 4 GND 1 V ON ON V V V IN ST V bb GND OUT Open load Any kind of load. If VGND > VIN - VIN(T+) device stays off Logic Due to VGND >0, no VST = low signal available. detection unit Vbb disconnect with energized inductive load OFF-state diagnostic condition: V > 3 V typ.; IN low 3 OUT high IN Vbb 2 PROFET OUT 5 R EXT ST 4 GND OFF 1 V OUT V bb Logic Open load R unit detection O Normal load current can be handled by the PROFET itself. Signal GND Data Sheet 8 2013-10-10

BTS409L1 Vbb disconnect with charged external Maximum allowable load inductance for inductive load a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., S 3 Vbb = 12 V, RL = 0  L [mH] high IN Vbb 10000 2 PROFET OUT 5 D ST 4 GND 1 1000 V bb If other external inductive loads L are connected to the PROFET, 100 additional elements like D are necessary. Inductive Load switch-off energy dissipation Ebb 10 EAS E Load V IN bb 1 PROFET OUT 1 2 3 4 5 = ST EL GND L IL [A] { Z L RL ER Transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 10 Energy stored in load inductance: EL = 1/2·L·I2L While demagnetizing load inductance, the energy dissipated in PROFET is 1 E = E + E - E =  V ·i (t) dt, AS bb L R ON(CL) L with an approximate solution for R  0: L I ·L I ·R EAS= 2L·R L·(Vbb + |VOUT(CL)|)· ln (1+ |VOLUT(CLL)| ) D= 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 tp [s] Data Sheet 9 2013-10-10

BTS409L1 Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN IN V bb t d(ST) ST *) V OUT V OUT ST open drain I L t IL(OL) t proper turn on under all conditions *) if the time constant of load is too large, open-load-status may Figure 2a: Switching a lamp, occur Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN IN ST I L I L(SCp) V I OUT L(SCr) I L t ST t Heating up may require several milliseconds, depending on external conditions Data Sheet 10 2013-10-10

BTS409L1 Figure 4a: Overtemperature: Figure 5b: Open load: detection in ON-state, open Reset if Tj <Tjt load occurs in on-state IN IN t d(ST OL1) t d(ST OL2) ST ST V V OUT OUT T normal open normal I J L t t td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ Figure 5a: Open load: detection in ON-state, turn Figure 5c: Open load: detection in ON- and OFF-state on/off to open load (with REXT), turn on/off to open load IN IN t t d(ST) d(ST OL4) t ST ST d(ST) V V OUT OUT I I L L open open t t The status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature". Data Sheet 11 2013-10-10

BTS409L1 Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V V V V bb Vbb ON(CL) bb(over) bb(o rst) V Vbb(u cp) bb(under) V bb(u rst) V OUT V OUT ST ST open drain t t Figure 6b: Undervoltage restart of charge pump V VON(CL) on e e e at at at st st st off- on- V off- bb(over) V V bb(u rst) bb(o rst) V bb(u cp) V bb(under) V bb charge pump starts at Vbb(ucp) =5.6 V typ. Data Sheet 12 2013-10-10

BTS409L1 Published by Package and Ordering Code Infineon Technologies AG, Bereichs Kommunikation All dimensions in mm D-81726 München PG-TO263-5-2 Ordering code © Infineon Technologies AG 2013 BTS409L1 E3062A SP001104814 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 2013-10-10